Shulpina, I.L. : rechercher sur Z-Library

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1

The structural features of the germanium-silicon solid solution crystals obtained under microgravity

V.S. Zemskov, I.N. Belokurova, I.L. Shulpina, A.N. Titkov

Journal:

Advances in Space Research

Année:

1984

Langue:

english

Fichier:

PDF, 321 KB

english, 1984

2

The influence of lattice mismatch upon defects generation and luminescent characteristics of heterostructures in the GaP-InP system

Dr. S. G. Konnikov, T. B. Popova, S. A. Ruvimov, M. M. Sobolev, L. M. Sorokin, I. L. Shulpina, V. E. Umansky

Journal:

Crystal Research and Technology

Année:

1981

Langue:

english

Fichier:

PDF, 467 KB

english, 1981

3

Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism

Dr. E. N. Mokhov, Dr. I. L. Shulpina, A. S. Tregubova, Dr. Yu. A. Vodakov

Journal:

Crystal Research and Technology

Année:

1981

Langue:

english

Fichier:

PDF, 705 KB

english, 1981

4

Solidification of GeSi solid solution in near-zero-G conditions

V.S. Zemskov, I.N. Belokurova, A.N. Titkov, I.L. Shulpina

Journal:

Advances in Space Research

Année:

1981

Langue:

english

Fichier:

PDF, 410 KB

english, 1981

5

Model of a block structure generation in basal-faceted sapphire ribbons

L.L. Kuandykov, S.I. Bakholdin, I.L. Shulpina, P.I. Antonov

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 322 KB

english, 2005

6

The growth of sapphire ribbons with a basal facet surface

V.S. Yuferev, V.M. Krymov, L.L. Kuandykov, S.I. Bakholdin, Yu.G. Nosov, I.L. Shulpina, P.I. Antonov

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 352 KB

english, 2005

7

Growth striations and dislocations in highly doped semiconductor single crystals

I.A. Prokhorov, Yu.A. Serebryakov, B.G. Zakharov, I.Zh. Bezbakh, V.V. Ratnikov, I.L. Shulpina

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 929 KB

english, 2008

8

Strains in macroporous silicon introduced by cyclic oxidation

E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, I. L. Shulpina

Journal:

physica status solidi (a)

Année:

2003

Langue:

english

Fichier:

PDF, 190 KB

english, 2003

9

X-ray determination of the surface compression force in the ion-doped layer in silicon

P. V. Petrashen, I. L. Shulpina

Journal:

physica status solidi (a)

Année:

1983

Langue:

english

Fichier:

PDF, 227 KB

english, 1983

10

Possibilities for achieving steady-state growth conditions during oriented crystallization of gallium antimonide by the vertical Bridgman method using the “Polizon” setup

Yu. A. Serebryakov, M. P. Marchenko, I. A. Prokhorov, E. N. Korobeinikova, I. L. Shulpina

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Année:

2009

Langue:

english

Fichier:

PDF, 242 KB

english, 2009

11

Formation of the block structure during growth of basal-plane-faceted sapphire ribbons with different widths

S. I. Bakholdin, V. M. Krymov, A. V. Moskalev, Yu. G. Nosov, I. L. Shulpina, V. S. Yuferev, P. I. Antonov

Journal:

Crystallography Reports

Année:

2008

Langue:

english

Fichier:

PDF, 387 KB

english, 2008

12

Diagnostics of highly doped czochralski-grown silicon crystals

R. N. Kyutt, S. S. Ruvimov, I. L. Shulpina

Journal:

Technical Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 204 KB

english, 2006

13

The outlook for X-ray diffraction topography

I. L. Shulpina, E. V. Suvorov

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Année:

2010

Langue:

english

Fichier:

PDF, 910 KB

english, 2010

14

Reproductive health in couples with sterility and aborted pregnancies living in a territory with radionuclide contamination

V.N. Gorodkov, L.V. Posiseyeva, N.Yu. Borzova, A.P. Novikov, S.B. Odintsov, Ye.A. Shulpina

Journal:

Reproductive Toxicology

Année:

1993

Langue:

english

Fichier:

PDF, 121 KB

english, 1993

15

X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Kyutt, R N, Shulpina, I L, Mosina, G N, Ratnikov, V V, Sorokin, L M, Scheglov, M P, Ruvimov, S S, Kearns, J, Todt, V

Journal:

Journal of Physics D Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 220 KB

english, 2005

16

Relaxor, glassy and ferroic states in Cd 2 Nb 2 O 7 pyrochlore

Kolpakova, N. N., Shulpina, I. L., Shcheglov, M. P., Waplak, S., Bednarski, W., Nawrocik, W., Wiesner, M.

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 426 KB

english, 2000

17

[IEEE 2014 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Saratoga Springs, NY (2014.5.19-2014.5.21)] 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) - Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Kozlov, V. A., Soldatenkov, F. Yu, Danilchenko, V. G., Korolkov, V. I., Shulpina, I. L.

Année:

2014

Langue:

english

Fichier:

PDF, 391 KB

english, 2014

18

Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

Parfeniev, R.V., Farbshtein, I.I., Shulpina, I.L., Yakimov, Sergei V., Shalimov, V.P., Turchaninov, A.M., Ivanov, A.I., Savin, S.F.

Journal:

Materials Science Forum

Année:

2000

Fichier:

PDF, 477 KB

2000

19

X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates

Shulpina, I.L., Savkina, N.S., Shuman, V.B., Ratnikov, V.V., Syväjärvi, Mikael, Yakimova, Rositza

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 1.86 MB

english, 2005

20

X-ray study of dislocation structure formation features in epitaxial systems with small mismatch

I. A. Prokhorov, B. G. Zakharov, V. S. Man'shin, I. L. Shulpina

Année:

1993

Langue:

english

Fichier:

PDF, 625 KB

english, 1993

21

Microdefects investigated by X-ray topography

Journal:

Journal of Physics D Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 415 KB

english, 1993

22

GaAs- A 3 B 5 heterostructures for high-speed power diodes manufacturing

Soldatenkov, F Yu, Kozlov, V A, Shulpina, I L, Ivanovskiy, V I

Journal:

Journal of Physics Conference Series

Année:

2015

Langue:

english

Fichier:

PDF, 817 KB

english, 2015